The First Consumer SATA QLC Samsung 860 QVO SSD 1TB and 4TB-Part1

The introduction of four bit per cell (QLC) NAND flash memory continues with Samsung’s launch of their first consumer SATA SSD with QLC NAND. The new 860 QVO establishes a new entry-level tier in Samsung’s highly successful SSD product family. Unlike previous low-end offerings like the 750 EVO and the plain 850, the 860 QVO is getting a broad release and is here to stay.

The First Consumer SATA QLC Samsung 860 QVO SSD 1TB and 4TB-Part2

Samsung 860 QVO: Koo-vo?

The Samsung 860 QVO is the first of a new wave of SATA SSDs that should be able to beat the prices on even DRAMless TLC-based SSDs thanks to the increased density of QLC NAND—and the 860 QVO itself is equipped with a full-size LPDDR4 DRAM cache.

Samsung 860 QVO Primary Specifications
Capacity 1 TB 2 TB 4 TB
Form Factor 2.5″ 7mm SATA
Controller Samsung MJX
NAND Flash Samsung 1Tb 64L 3D QLC
DRAM (LPDDR4) 1 GB 2 GB 4 GB
Sequential Read 550 MB/s
Sequential
Write
SLC Cache 520 MB/s
QLC 80 MB/s 160 MB/s 160 MB/s
Warranty 3 years
Write Endurance 360 TB
0.3 DWPD
720 TB
0.3 DWPD
1440 TB
0.3 DWPD
MSRP $149.99 $299.99 $599.99

Samsung’s consumer SATA product line now consists of the 860 QVO, 860 EVO and 860 PRO. The 860 QVO, EVO and PRO all share a common hardware platform based around Samsung’s MJX SSD controller and their 64-layer 3D NAND, with the product tiers differing primarily in the number of bits stored per flash memory cell.

The 860 QVO, from the box, is given a write endurace rating equivalent to 0.3 Drive Writes Per Day (DWPD), which even for the 1TB means 300GB a day, every day, which goes above and beyond most consumer workloads. Pricing is set to run at $150 for the smallest 1TB model, up to $600 for the 4TB model, making an equal cost per GB for the full range. It should be noted that the introductory MSRPs for the 860 QVO are not that aggressive in comparison to the record-setting sales we’ve been seeing on TLC SSDs recently.

MLC vs TLC vs QLC: Why QLC Matters

Two bit per cell MLC as used in the 860 PRO is now quite rare in the consumer SSD market and almost entirely absent from current enterprise SSD, having been largely replaced by three bit per cell TLC as used in the 860 EVO. With each increase in bits stored per cell, performance and write endurance decrease as SSDs need to be more careful to correctly discriminate between voltage levels, now up to 16 for QLC NAND.

While controller advances and other NAND process improvements (especially the switch from planar to 3D NAND) allowed TLC to overcome almost all of its disadvantages relative to MLC, QLC NAND is not expected to do the same. Early projections for QLC NAND called for at most a few hundred program/erase cycles, which would produce drives that would require careful treatment with workload that treated the storage more or less as a write-once, read-many (WORM) media. As QLC got closer to mass production, the story shifted and it became clear that QLC NAND would have adequate endurance for use as general-purpose storage.

Intel and Micron were the first to ship their QLC NAND, initially in the Micron 5210 ION enterprise SATA SSD and then in the Intel 660p and Crucial P1 consumer M.2 NVMe SSDs. The 660p and P1 introduced QLC NAND to the consumer SSD market, but as NVMe drives they still carry a price premium over SATA SSDs. However, as mentioned above, the introductory MSRPs for the 860 QVO are not at all aggressive in comparison to the record-setting sales we’ve been seeing on TLC SSDs recently. Those sales are not due entirely to the holiday season—flash memory prices in general have been crashing now that everyone has their 64-layer NAND in full mass production while PC and smartphone sales have been slowing. Meanwhile, rumors indicate that yields on QLC NAND have been poor, so the true cost is close to that of TLC instead of reflecting the ideal 25% discount per-GB.

Samsung 860 QVO Secondary Specifications
Capacity 1 TB 2 TB 4 TB
DRAM (LPDDR4) 1 GB 2 GB 4 GB
SLC Cache
Size
Min 6 GB 6 GB 6 GB
Max 42 GB 78 GB 78 GB
Sequential Read 550 MB/s
Sequential
Write
SLC Cache 520 MB/s
QLC 80 MB/s 160 MB/s 160 MB/s
Random
Read IOPS
QD1 7.5k (SLC)
4.4k (QLC)
QD32 96k (SLC)
36k (QLC)
97k (SLC)
60k (QLC)
Random
Write IOPS
QD1 42k (SLC)
21k (QLC)
42k (SLC)
38k (QLC)
QD32 89k (SLC)
21k (QLC)
89k (SLC)
40k (QLC)
89k (SLC)
42k (QLC)
Power Read 2.1 W 2.3 W 2.3 W
Write 2.2 W 3.1 W 3.1 W
Idle 30 mW 30 mW 30 mW
DevSlp 3 mW 3.5 mW 7 mW

source: Anandtech

 

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